A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• ; focused helium ion beam-induced deposition; focused helium ion beam milling; helium ion beam lithography; helium ion implantation; Introduction Since the helium ion microscope (HIM) was introduced 15 years ago [1][2][3], over one hundred HIMs have been installed worldwide and over one thousand research

• introduction of the HIM, ion beam-based lithography mainly relied on the gallium FIB, for which major drawbacks were ion beam sputtering of the resist and the relatively large beam spot size (several nanometers) with its significant beam tails. Helium ion beam lithography (HIBL) using the HIM is therefore a

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• have previously been difficult to obtain as sample preparation of such samples for SEM or TEM are often incompatible with the needs of high-resolution AFM measurements. AFM is also useful in assisting helium ion beam lithography. Many resists, including poly(methyl methacrylate) (PMMA), have higher

• to be navigated onto the region of interest (Figure 2b,c) to perform AFM topography imaging (Figure 2d). PMMA has traditionally been used as a positive resist in electron beam lithography. Helium ion beam lithography has emerged as a powerful technique to achieve even smaller feature size thanks to

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• about 5 nm, which is smaller than ξc in NbN, with the help of helium ion beam lithography. The successful implementation of this method could lead to the creation of low-temperature nanoscale Josephson junctions and arrays of them. For example, SN-S-SN junctions can be promising to use in programmable

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• ”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The

• minimal He+ ion damage effects compared with the earlier Ga+ systems, and reduced proximity effect, are the reasons for the renewed interest in ion beam lithography in the form of scanning helium ion beam lithography or “SHIBL”. The ultimate resolution is determined by a combination of ion beam diameter

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• approaches have been used to exploit the capabilities of HIM, such as ion milling [21], scanning helium ion beam lithography (SHIBL) [22], and helium ion beam induced deposition (HIBID) [20]. Here we used 4'-nitro-1,1'-biphenyl-4-thiol (NBPT) as a molecular precursor to form SAMs on a Au substrate and

• Freestanding carbon nanomembranes were successfully fabricated from aromatic self-assembled monolayers by using helium ion beam lithography. Three distinct stages of the crosslinking process, i.e., the initial nucleation, 1D growth and 2D growth, were observed ex situ by helium ion microscopy. Such a sequence